APTGV50H60T3G APTGV50H60T3G ? rev 0 june, 2007 www.microsemi.com 1-9 these devices are sensitiv e to electrostatic discharge. proper ha nding procedures should be followe d. see application note apt0502 on www.microsemi.com q3 11 10 q1 cr1 7 22 13 14 cr3 3 30 29 32 18 19 23 8 15 31 r1 16 4 cr4 cr2 q2 q4 26 27 top switches : trench + field stop igbt ? bottom switches : fast npt igbt 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together 13/14 ; 15/16 ; 26/27 ; 31/32 trench & field stop ? igbt q1, q3: v ces = 600v ; i c = 50a @ tc = 80c fast npt igbt q2, q4: v ces = 600v ; i c = 50a @ tc = 80c application ? solar converter features ? q2, q4 fast non punch through (npt) igbt - switching frequency up to 100 khz - rbsoa & scsoa rated - low tail current ? q1, q3 trench & field stop igbt ? - low voltage drop - switching frequency up to 20 khz - rbsoa & scsoa rated - low tail current ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? optimized conduction & switching losses ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? easy paralleling due to positive t c of v cesat ? rohs compliant full - bridge npt & trench + field stop ? igbt power module
APTGV50H60T3G APTGV50H60T3G ? rev 0 june, 2007 www.microsemi.com 2-9 all ratings @ t j = 25c unless otherwise specified 1. top switches 1.1 top trench + field stop igbt ? characteristics absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 80 i c continuous collector current t c = 80c 50 i cm pulsed collector current t c = 25c 100 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 176 w rbsoa reverse bias safe operating area t j = 150c 100a @ 550v electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 50a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 600a 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 600 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 3150 c oes output capacitance 200 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 95 pf t d(on) turn-on delay time 110 t r rise time 45 t d(off) turn-off delay time 200 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 50a r g = 8.2 ? 40 ns t d(on) turn-on delay time 120 t r rise time 50 t d(off) turn-off delay time 250 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 50a r g = 8.2 ? 60 ns t j = 25c 0.3 e on turn-on switching energy t j = 150c 0.43 mj t j = 25c 1.35 e off turn-off switching energy v ge = 15v v bus = 300v i c = 50a r g = 8.2 ? t j = 150c 1.75 mj r thjc junction to case thermal resistance 0.85 c/w
APTGV50H60T3G APTGV50H60T3G ? rev 0 june, 2007 www.microsemi.com 3-9 1.2 top fast diode characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 25 i rm maximum reverse leakage current v r =600v t j = 125c 500 a i f dc forward current tc = 80c 30 a i f = 30a 1.8 2.3 i f = 60a 2.1 v f diode forward voltage i f = 30a t j = 125c 1.5 v t j = 25c 25 t rr reverse recovery time t j = 125c 160 ns t j = 25c 35 q rr reverse recovery charge i f = 30a v r = 400v di/dt =200a/s t j = 125c 480 nc r thjc junction to case thermal resistance 1.2 c/w 2. bottom switches 2.1 bottom fast npt igbt characteristics absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 65 i c continuous collector current t c = 80c 50 i cm pulsed collector current t c = 25c 230 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 250 w rbsoa reverse bias safe operating area t j = 125c 100a @ 500v electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 250 i ces zero gate voltage collector current v ge = 0v v ce = 600v t j = 125c 500 a t j = 25c 1.7 2.0 2.45 v ce(sat) collector emitter saturation voltage v ge =15v i c = 50a t j = 125c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 1ma 4 6 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na
APTGV50H60T3G APTGV50H60T3G ? rev 0 june, 2007 www.microsemi.com 4-9 dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 2200 c oes output capacitance 323 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 200 pf q g total gate charge 166 q ge gate ? emitter charge 20 q gc gate ? collector charge v ge = 15v v bus = 300v i c = 50a 100 nc t d(on) turn-on delay time 40 t r rise time 9 t d(off) turn-off delay time 120 t f fall time inductive switching (25c) v ge = 15v v bus = 400v i c = 50a r g = 2.7 ? 12 ns t d(on) turn-on delay time 42 t r rise time 10 t d(off) turn-off delay time 130 t f fall time inductive switching (125c) v ge = 15v v bus = 400v i c = 50a r g = 2.7 ? 21 ns e on turn-on switching energy t j = 125c 0.5 e off turn-off switching energy v ge = 15v v bus = 400v i c = 50a r g = 2.7 ? t j = 125c 1 mj r thjc junction to case thermal resistance 0.5 c/w 2.2 bottom diode characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 25 i rm maximum reverse leakage current v r =600v t j = 125c 500 a i f dc forward current tc = 80c 30 a i f = 30a 1.8 2.3 i f = 60a 2.1 v f diode forward voltage i f = 30a t j = 125c 1.5 v t j = 25c 25 t rr reverse recovery time t j = 125c 160 ns t j = 25c 35 q rr reverse recovery charge i f = 30a v r = 400v di/dt =200a/s t j = 125c 480 nc r thjc junction to case thermal resistance 1.2 c/w 3. temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 t: thermistor temperature r t : thermistor value at t
APTGV50H60T3G APTGV50H60T3G ? rev 0 june, 2007 www.microsemi.com 5-9 4. package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150* t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 110 g tj=175c for trench & field stop igbt 5. sp3 package outline (dimensions in mm) 17 12 28 1 see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com 6. top switches curves 6.1 top trench + field stop igbt ? typical performance curves output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 3 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 20 40 60 80 100 00.511.522.533.5 v ce (v) i c (a) t j = 150c
APTGV50H60T3G APTGV50H60T3G ? rev 0 june, 2007 www.microsemi.com 6-9 transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 20 40 60 80 100 5 6 7 8 9 101112 v ge (v) i c (a) energy losses vs collector current eon eoff 0 0.5 1 1.5 2 2.5 3 3.5 020406080100 i c (a) e (mj) v ce = 300v v ge = 15v r g = 8.2 ? t j = 150c eon eoff 0 0.5 1 1.5 2 2.5 3 5 152535455565 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 50a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 25 50 75 100 125 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =8.2 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) 6.2 top fast diode typical performance curves t j =-55c t j =25c t j =125c 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f , anode to cathode voltage (v) i f , forward current (a) forw ard current vs forw ard voltage 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maxim um effective transient therm al im pedance, junction to case vs pulse duration
APTGV50H60T3G APTGV50H60T3G ? rev 0 june, 2007 www.microsemi.com 7-9 7. bottom switches curves 7.1 bottom fast npt igbt typical performance curves output characteristics (v ge =15v) t j =-55c t j =25c t j =125c 0 50 100 150 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle transfer characteristics t j =-55c t j =25c t j =125c 0 25 50 75 100 125 150 012345678910 v ge , gate to emitter voltage (v) ic, collector current (a) 250s pulse test < 0.5% duty cycle ic=100a ic=50a ic=25a 0 1 2 3 4 5 6 7 8 6 8 10 12 14 16 v ge , gate to emitter voltage (v) v ce , collector to emitter voltage (v) on state voltage vs gate to emitter volt. t j = 25c 250s pulse test < 0.5% duty cycle ic=100a ic=50a ic=25a 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 125 t j , junction temperature (c) v ce , collector to emitter voltage (v) on state voltage vs junction temperature 250s pulse test < 0.5% duty cycle v ge = 15v 0.70 0.80 0.90 1.00 1.10 1.20 -50 -25 0 25 50 75 100 125 t j , junction temperature (c) collector to emitter breakdown voltage (normalized) breakdown voltage vs junction temp. 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) ic, dc collector current (a) dc collector current vs case temperature gate charge v ce =120v v ce =300v v ce =480v 0 2 4 6 8 10 12 14 16 18 0 25 50 75 100 125 150 175 200 gate charge (nc) v ge , gate to emitter voltage (v) i c = 50a t j = 25c output characteristics (v ge =10v) t j =-55c t j =25c t j =125c 0 50 100 150 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle
APTGV50H60T3G APTGV50H60T3G ? rev 0 june, 2007 www.microsemi.com 8-9 v ge = 15v 20 30 40 50 60 0 25 50 75 100 125 150 i ce , collector to emitter current (a) td(on), turn-on delay time (ns) turn-on delay time vs collector current tj = 125c v ce = 400v r g = 2.7 ? v ge =15v, t j =25c v ge =15v, t j =125c 50 75 100 125 150 175 200 0 25 50 75 100 125 150 i ce , collector to emitter current (a) td(off), turn-off delay time (ns) turn-off delay time vs collector current v ce = 400v r g = 2.7 ? v ge =15v, t j =125c 0 10 20 30 40 50 60 0 25 50 75 100 125 150 i ce , collector to emitter current (a) tr, rise time (ns) current rise time vs collector current v ce = 400v r g = 2.7 ? t j = 25c t j = 125c 0 10 20 30 40 50 60 0 255075100125150 i ce , collector to emitter current (a) tf, fall time (ns) current fall time vs collector current v ce = 400v, v ge = 15v, r g = 2.7 ? t j =125c, v ge =15v 0 0.5 1 1.5 2 0 25 50 75 100 125 150 i ce , collector to emitter current (a) e on , turn-on energy loss (mj) turn-on energy loss vs collector current v ce = 400v r g = 2.7 ? t j = 125c 0 0.5 1 1.5 2 2.5 0 255075100125150 i ce , collector to emitter current (a) e off , turn-off energy loss (mj) turn-off energy loss vs collector current v ce = 400v v ge = 15v r g = 2.7 ? eon, 50a eon, 50a eoff, 50a 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 gate resistance (ohms) switching energy losses vs gate resistance switching energy losses (mj) v ce = 400v v ge = 15v t j = 125c 0 20 40 60 80 100 120 0 200 400 600 i c , collector current (a) reverse bias safe operating area v ce , collector to emitter voltage (v)
APTGV50H60T3G APTGV50H60T3G ? rev 0 june, 2007 www.microsemi.com 9-9 cies cres coes 100 1000 10000 0 1020304050 c, capacitance (pf) capacitance vs collector to emitter voltage v ce , collector to emitter voltage (v) 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration operating frequency vs collector current hard switching zcs zvs 0 40 80 120 160 200 240 0 20406080100 i c , collector current (a) f max , operating frequency (khz) v ce = 400v d = 50% r g = 2.7 ? t j = 125c t c = 75c 7.2 bottom diode typical performance curves t j =-55c t j =25c t j =125c 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f , anode to cathode voltage (v) i f , forward current (a) forw ard current vs forw ard voltage 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration microsemi reserves the right to change, without notice, the specifications and info rmation contained herein microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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